ACE7401B Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor

ACE7401B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE7401B uses advanced trench technology to provide excellent R_DS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
 V_DS(V)=-30V
 I_D=-29A (V_GS=-10V)
 R_DS(ON)＜13mΩ (V_GS=-20V)
 R_DS(ON)＜14mΩ (V_GS=-10V)
 R_DS(ON)＜17mΩ (V_GS=-5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
T_A=25 ^OC
T_A=100 ^OC
Drain Current (Pulse)^C
Drain Current (Continuous)
T_A=25 ^OC
T_A=75 ^OC
Power Dissipation ^B
T_A=25 ^OC
T_A=100 ^OC
Power Dissipation ^A
T_A=25 ^OC
T_A=70 ^OC
Operating and Storage Temperature Range
Symbol Max Unit
V_DSS
-30
V
V_GSS
±25
V
-29
I_D
-23
I_DM
-60 A
-12
I_DSM
-9.7
P_D
P_DSM
29
12
W
3.1
2
T_J,T_STG -55 to 150 ^OC
Thermal Characteristics
Parameter
Symbol Typ Max Units
Maximum Junction-to-Ambient ^A
t≦10s
Maximum Junction-to-Ambient ^AD Steady-State ^RθJA
30 40
60 75 ^OC/W
Maximum Junction-to-Lead Steady-State R_θJL 3.5 4.2
VER 1.2 1