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| ACE23S46A Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE23S46A
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25â, unless otherwise noted
Parameter
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-Source On-Resistance
Forward Trans Conductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(ON)
Gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
Static
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VDS=0V,VGS=±12V
VDS=20V, VGS=0V
VDS=20V, VGS=0V TJ=55â
VDSâ¥5V,VGS=4.5V
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.0A
VGS=1.8V, ID=4.0A
VDS=15V,ID=5.0A
IS=1.0A, VGS=0V
Dynamic
VDS=10V, VGS=4.5V, ID=5.0A
VDS=10V, VGS=0V, f=1MHz
VDD=10V, RL=10Ω, VGEN=4.5V,
ID=1.0A ,RG=6Ω
Min. Typ. Max. Unit
20
V
0.4
1.0
±100 nA
1
uA
10
6
A
0.028 0.035
0.036 0.040 Ω
0.080 0.100
30
S
0.8 1.2 V
10 13
1.4
nC
2.1
600
120
pF
100
15 25
40 60
nS
45 65
30 40
VER 1.1 3
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