ACE23S46A Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET

ACE23S46A
N-Channel Enhancement Mode MOSFET
Description
The ACE23S46A is the N-Channel logic enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
Features
 20V/6.0A,R_DS(ON)= 35mΩ@VGS=4.5V
 20V/5.0A,R_DS(ON)= 40mΩ@VGS=2.5V
 20V/4.0A,R_DS(ON)= 100mΩ@VGS=1.8V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 SOT-23 package design
Application
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter
Absolute Maximum Ratings (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J=150℃)
Pulsed Drain Current
T_A=25℃
T_A=70℃
Continuous Source Current (Diode Conduction)
Power Dissipation
T_A=25℃
T_A=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
V_DSS
V_GSS
I_D
I_DM
I_S
P_D
T_J
T_STG
R_θJA
Max
20
±12
4.0
3.0
13
1.0
1.25
0.8
-55/150
-55/150
140
Unit
V
V
A
A
A
W
O_C
O_C
O_C/W
VER 1.1 1