ACE2372M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel 100-V MOSFET

Electrical Characteristics
T_A=25℃, unless otherwise specified.
ACE2372M
N-Channel 100-V MOSFET
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
ReverseTransfer Capacitance
Symbol
V_{GS (th)}
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Conditions
Static
V_DS = V_GS, I_D = 250 uA
V_DS = 0 V, V_GS =± 20 V
V_DS = 80 V, V_GS = 0 V
V_DS = 80V, V_GS = 0 V, T_J = 55°C
V_DS = 5 V, V_GS = 10 V
VGS = 10 V, ID = 0.5 A
VGS = 5.5 V, ID = 0.4 A
VDS = 15 V, ID = 0.5 A
I_S = 0.33 A, V_GS = 0 V
Dynamic
VDS = 50 V, VGS = 4.5 V, ID = 0.5 A
VDD = 50 V, RL = 100 Ω , ID = 0.5 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f =1 MHz
Min. Typ. Max. Unit
1
V
±10 nA
1
uA
10
1
A
2000
mΩ
2200
4
S
0.79
V
1.2
0.2
nC
0.8
2
4
nS
12
5
61
19
pF
9
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
VER 1.1 3