ACE2372M Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel 100-V MOSFET

ACE2372M
N-Channel 100-V MOSFET
Description
ACE2372M uses advanced trench technology to provide excellent R_DS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications:
• LED Inverter Circuits
• DC/DC Conversion Circuits
• Motor drives
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current ^b
T_A=25°C
T_A=70°C
Continuous Source Current (Diode Conduction) ^a
Power Dissipation^a
T_A=25°C
T_A=70°C
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
100
±20
0.66
0.52
3
0.66
1.3
0.8
-55 to 150
Unit
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient ^a
t<=10sec
Steady State
Symbol Maximum Unit
R_θJA
100
°C/W
166
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1