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| ACE2342 Datasheet, PDF (3/8 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE2342
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
(TA=25â, Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS
VGS=0V, ID=-250uA
20
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
0.4
V
1.0
Gate Leakage Current
IGSS
VDS=0.V, VGS=±12V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
VDS=20V, VGS=0V TJ=55â
1
uA
10
On-State Drain Current
ID(ON)
VDSâ§5V, VGS=4.5V
6
A
VGS=4.5V, ID=5.0A
0.026 0.035
Drain-Source On-Resistance RDS(ON)
VGS=2.5V, ID=4.5A
0.029 0.040 Ω
VGS=1.8V, ID=4.0A
0.035 0.048
Forward Transconductance
Gfs
VDS=15V, ID=5.0A
30
S
Diode Forward Voltage
VSD
IS=-1.0A, VGS=0V
0.8 1.2 V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
td(on)
tr
Turn-Off Time
td(off)
tf
VDS=10V, VGS=4.5V,
IDâ¡5.0A
VDS=10V, VGS=0V,
f=1MHz
VDD=10V, RL=10Ω
IDâ¡1.0A, VGEN=4.5V
RG=6Ω
10 13
1.4
nC
2.1
600
120
pF
100
15 25
40 60
ns
45 65
30 40
VER 1.3 3
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