 English |
|
|
|
|
|
|
|
| ACE2342 Datasheet, PDF (1/8 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
| |||
|
ACE2342
N-Channel Enhancement Mode MOSFET
Description
The ACE2342 is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density , DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited for low voltage application such as
cellular phone and notebook computer power management and other battery powered circuits, and low
in-line power loss are needed in a very small outline surface mount package.
Features
ï· 20V/5.0A,RDS(ON)= 35mâ¦@VGS=4.5V
ï· 20V/4.5A,RDS(ON)= 40mâ¦@VGS=2.5V
ï· 20V/4.0A,RDS(ON)= 48mâ¦@VGS=1.8V
ï· Super high density cell design for extremely low RDS(ON)
ï· Exceptional on-resistance and maximum DC current capability
Application
ï· Power Management in Note book
ï· Portable Equipment
ï· Battery Powered System
ï· DC/DC Converter
ï· Load Switch
ï· DSC
ï· LCD Display inverter
Absolute Maximum Ratings
(TA=25â Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current (TJ=150â)
TA=25â
TA=70â
ID
4.0
A
3.0
Pulsed Drain Current
IDM
13 A
Continuous Source Current (Diode Conduction) IS
1.0 A
Power Dissipation
TA=25â
TA=70â
PD
1.25
W
0.8
Operating Junction Temperature
TJ -55/150 â
Storage Temperature Range
TSTG -55/150 â
Thermal Resistance-Junction to Ambient
RθJA 140 â/W
VER 1.3 1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese