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| ACE2320M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel 20-V MOSFET | |||
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Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain CurrentA
IDSS
ID(on)
Drain-Source On-ResistanceA
Forward TransconductanceA
Diode Forward Voltage
RDS(ON)
gFS
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
ReverseTransfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
ACE2320M
N-Channel 20-V MOSFET
Test Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±8 V
VDS = 16 V, VGS = 0 V
VDS = 16V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 4.5V, ID = 5.6 A
VGS = 2.5 V, ID = 4.5 A
VDS =15 V, ID = 5.6 A
IS = 1 A, VGS = 0 V
Dynamic b
VDS = 10V, VGS = 4.5 V, ID = 5.6 A
VDS = 10 V, RL = 1.8 Ω, ID = 5.6 A,
VGEN = 4.5 V, RGEN = 6Ω,
VDS = 15 V, VGS = 0 V, f =1 MHz
Min Typ Max Unit
1
V
±10 nA
1
uA
25
10
A
18
mΩ
21
12
S
0.69
V
11
1.9
nC
3.8
367
1337
ns
4697
3037
628
105
99
Note :
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing
VER 1.1 3
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