ACE2320M Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel 20-V MOSFET

ACE2320M
N-Channel 20-V MOSFET
Description
ACE2320M uses advanced trench technology to provide excellent R_DS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
• Low r_DS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe SOT-23 saves board space
• Fast switching speed
• High performance trench technology
Applications
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a
Pulsed Drain Current ^b
T_A=25℃
T_A=70℃
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a
T_A=25℃
T_A=70℃
Operating temperature / storage temperature
Symbol Limit Units
V_DS
20
V
V_GS
±8
V
7.0
I_D
A
5.5
I_DM
20
A
I_S
1.9
A
1.3
P_D
W
0.8
T_J/T_STG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient ^a
t <= 10 sec
Steady State
R_θJA
Maximum
100
166
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1