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| ACE2305 Datasheet, PDF (3/8 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET | |||
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ACE2305
Technology P-Channel Enhancement Mode MOSFET
Electrical Characteristics
(TA=25â, Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
-15
-0.35
V
-0.85
Gate Leakage Current
IGSS
VDS=0.V, VGS=±10V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS=-12V, VGS=0V
VDS=-12V, VGS=0V TJ=55â
-1 uA
-10
On-State Drain Current
ID(ON)
VDSâ¦-5V, VGS=-4.5V
VDSâ¦-5V, VGS=-2.5V
-4
-2
A
VGS=-4.5V, ID=-3.5A
0.055 0.70
Drain-Source On-Resistance RDS(ON)
VGS=-2.5V, ID=-3.0A
0.065 0.85 â¦
VGS=-1.8V, ID=-2.0A
0.085 0.105
Forward Transconductance
Gfs
VDS=-5.0V, ID=-3.5A
8.5
S
Diode Forward Voltage
VSD
IS=-1.5A, VGS=0V
-0.8 -1.2 V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
td(on)
tr
Turn-Off Time
td(off)
tf
VDS=-6V, VGS=-4.5V,
IDâ£-2.8A
VDS=-6V, VGS=0V,
f=1MHz
VDD=-6V, RL=6â¦
IDâ¡-1.0A, VGEN=-4.5V
RG=6â¦
4.8 8
1.0
nC
1.0
485
85
pF
40
10 16
13
23 ns
18 25
15 20
VER 1.2 3
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