ACE2305 Datasheet, PDF (1/8 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET

ACE2305
Technology P-Channel Enhancement Mode MOSFET
Description
The ACE2305 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
• -15V/-3.5A, R_DS(ON)=70mΩ@V_GS=-4.5V
• -15V/-3.0A, R_DS(ON)=85mΩ@V_GS=-2.5V
• -15V/-2.0A, R_DS(ON)=105mΩ@V_GS=-1.8V
• Super high density cell design for extremely low R_DS(ON)
• Exceptional on-resistance and maximum DC current capability
• SOT-23-3L package design
Application
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
V_DSS -15 V
Gate-Source Voltage
V_GSS ±12 V
Continuous Drain Current (T_J=150℃)
T_A=25℃
T_A=70℃
I_D
-3.5
A
-2.8
Pulsed Drain Current
I_DM
-10 A
Continuous Source Current (Diode Conduction)
Power Dissipation
T_A=25℃
T_A=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
I_S
P_D
T_J
T_STG
Rθ_JA
-1.6 A
1.25
W
0.8
150 ℃
-55/150 ℃
120 ℃/W
VER 1.2 1