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ACE2304_12 Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
ACE2304
N-Channel Enhancement Mode MOSFET
Dynamic
4.5 10
VDS=15V, VGS=10V, ID=2.5
0.8
nC
1.0
240
VDS=15V, VGS=0V, f=1MHz
110
pF
17
td(on)
tr
td(off)
tf
VDD=15RL=15, ID=1.0A, VGEN=10,
RG=6Ω
8
20
12 30
nS
17 35
8
20
Typical Performance Characteristics
Output Characteristics
Transfer Characteristics
VDS-Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS-Gate-to-Source Voltage (V)
Capacitance
ID-Drain Current (A)
VDS-Drain-to-Source Voltage (V)
VER 1.3 3