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| ACE2304_12 Datasheet, PDF (2/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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Packaging Type
SOT-23-3
3
1
2
SOT-23-3 Description
1
Gate
2
Source
3
Drain
ACE2304
N-Channel Enhancement Mode MOSFET
Ordering information
ACE2304 XX + H
Halogen - free
Pb - free
BM : SOT-23-3
Electrical Characteristics
TA=25â, unless otherwise noted
Parameter
Symbol
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS(th)
IGSS
IDSS
On-State Drain Current
ID(ON)
Drain-Source
On-Resistance
Forward Transconductance
Diode Forward Voltage
RDS(ON)
gfs
VSD
Conditions
Static
VGS=0V, ID=250 uA
VD=VGS, ID=250uA
VDS=0V,VGS=±20V
VDS=30V, VGS=1.0V
VDS=30V, VGS=0V TJ=55â
VDSâ§4.5V, VGS=10V
VDSâ§4.5V, VGS=4.5V
VGS=10V, ID=3.2A
VGS=4.5V, ID=2.0A
VDS=4.5V,ID=2.5A
IS=1.25A, VGS=0V
Min. Typ. Max. Unit
30
V
1.5 1.7 3.0
±100 nA
1
uA
10
6
A
4
0.050 0.065
Ω
0.065 0.090
4.6
S
0.82 1.2 V
VER 1.3 2
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