ACE2302 Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET

ACE2302
Technology N-Channel Enhancement Mode MOSFET
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
V_SD
Q_g
Q_gs
Q_gd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
I_S=1.6A, V_GS=0V
Dynamic
V_DS=10V, V_GS=4.5V, I_D=3.6A
V_DS=10V, V_GS=0V, f=1MHz
V_DD=10V, R_L=5.5Ω, I_D=3.6A, V_GEN=4.5V,
R_G=6Ω
0.85 1.2 V
5.4 10
0.65
nC
1.4
340
115
pF
33
12 25
36 60
nS
34 60
10 25
Typical Performance Characteristics
Output Characteristics
Transfer Characteristics
V_DS-Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
V_GS-Gate-to-Source Voltage (V)
Capacitance
I_D-Drain Current (A)
V_DS-Drain-to-Source Voltage (V)
VER 1.2 3