ACE2302 Datasheet, PDF (2/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET

Packaging Type
SOT-23-3
3
1
2
ACE2302
Technology N-Channel Enhancement Mode MOSFET
Pin Symbol Description
1
G
Gate
2
S
Source
3
D
Drain
Ordering information
Selection Guide
ACE2302 XX + H
Halogen - free
Pb - free
BM : SOT-23-3
Electrical Characteristics
T_A=25℃, unless otherwise noted
Parameter
Symbol
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(ON)
Drain-Source On-Resistance
Forward Transconductance
R_DS(ON)
gfs
Conditions
Static
V_GS=0V, I_D=250 uA
V_D=VGS, I_D=250uA
V_DS=0V,V_GS=±12V
V_DS=20V, V_GS=0V
V_DS=24V, V_GS=0V T_J=55℃
VDS≧5V, V_GS=4.5V
VDS≧5V, V_GS=2.5V
V_GS=4.5V, I_D=3.6A
V_GS=2.5V, I_D=3.1A
V_DS=5V,I_D=3.6A
Min. Typ. Max. Unit
20
V
0.45
1.2
±100 nA
1
uA
10
6
A
4
0.050 0.080
Ω
0.070 0.095
10
S
VER 1.2 2