 English |
|
|
|
|
|
|
|
| ACE2010M Datasheet, PDF (3/5 Pages) ACE Technology Co., LTD. – P-Channel -100V MOSFET | |||
| |||
| ◁ |
ACE2010M
P-Channel -100V MOSFET
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Conditions
Static
Min. Typ. Max. Unit
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
VGS (th)
IGSS
IDSS
ID(on)
VDS = VGS, ID = -250 uA
-1
VDS = 0 V, VGS = ±20 V
VDS = -80 V, VGS = 0 V
VDS = -80 V, VGS = 0 V, TJ = 55°C
VDS =- 5 V, VGS = -10 V
-20
V
±100 nA
-1
-10 uA
A
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
rDS(on)
gfs
VSD
VGS = -10 V, ID = -1 A
VGS = -4.5 V, ID = -1 A
VDS = -15 V, ID = -28 A
IS = -2.5A, VGS = 0 V
Dynamic
295
mΩ
590
8
S
-0.7
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -30 V, VGS = -4.5 V,
ID = -28 A
Qgd
18
5
nC
2
Turn-On Delay Time
td(on)
8
Rise Time
Turn-Off Delay Time
tr
VDD = -30 V, RL = 30 Ω , ID = -1 A
10
nS
td(off)
VGEN = -10 V, RGEN = 6 Ω
35
Fall Time
tf
12
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Packing Information
TO-252
VER 1.1 3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese