ACE2010M Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – P-Channel -100V MOSFET

ACE2010M
P-Channel -100V MOSFET
Description
The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide
low r_DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
converters and power management in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
Features
• Low r_DS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe DPAK saves board space
• Fast switching speed
• High performance trench technology
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^b
T_C=25°C
Continuous Source Current (Diode Conduction) ^a
Power Dissipation
T_C=25°C
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
-100
±20
11
±40
-15
50
-55 to 175
Unit
V
A
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient ^a
Maximum Junction-to-Case
Symbol Maximum Unit
R_θJA
R_θJC
50
°C/W
3.0
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1