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| ACE1551A Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance RDS(ON)
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
ACE1551A
N-Channel Enhancement Mode MOSFET
Conditions
Static
VGS=0V, ID=250 uA
VDS=VGS, IDS=250uA
VDS=0V,VGS=±12V
VDS=20V, VGS=0V
VDS=20V, VGS=0V, TJ=55â
VDS⥠4.5V,VGS =5V
VGS=4.5V, ID=0.95A
VGS=2.5V, ID=0.75A
VGS=1.8V, ID=0.65A
VGS=1.5V, ID=0.65A
VDS=10V,ID=0.4A
ISD=0.15A, VGS=0V
Dynamic
VDS=10V, VGS=4.5V, ID=0.6A
VGEN=4.5V, ID=0.5A, VDD=10V,
RG=6Ω, RL=10Ω
Min. Typ. Max. Unit
20
V
0.35
1.0
30 uA
1
uA
5
0.7
A
0.26 0.38
0.32 0.45
Ω
0.42 0.8
0.5 1.0
1.0
S
0.8 1.2 V
1.2 1.5
0.2
nC
0.3
5 10
8 15
nS
10 18
1.2 2.8
VER 1.3 3
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