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| ACE1551A Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE1551A
N-Channel Enhancement Mode MOSFET
Description
The ACE1551A is the N-Channel enhancement mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high density process is especially tailored to minimize
on-state resistance and provide superior switching performance. These devices are particularly suited for
low voltage applications such as notebook computer power management and other battery powered
circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
Features
⢠N-Channel
20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V
20V/0.65A,RDS(ON)=1000mΩ@VGS=1.5V
⢠Super high density cell design for extremely low RDS(ON)
⢠Exceptional on-resistance and maximum DC current capability
Applications
⢠Power Management in Note book
⢠Portable Equipment
⢠Battery Powered System
⢠DC/DC Converter
⢠Load Switch
⢠DSC
⢠LCD Display inverter
VER 1.3 1
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