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ACE1020M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel 200-V MOSFET
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ACE1020M
N-Channel 200-V MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Static
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
VGS (th)
IGSS
IDSS
ID(on)
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS =20 V
VDS = 160 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
rDS(on)
gfs
VSD
VGS = 10 V, ID = 4 A
VDS = 15 V, ID = 4 A
IS = 5 A, VGS = 0 V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
ReverseTransfer Capacitance
Crss
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
VDS = 100 V, VGS = 10 V, ID = 4 A
VDD = 100 V, RL = 5 Ω , ID = 4 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f =1 MHz
b. Guaranteed by design, not subject to production testing.
Min. Typ. Max. Unit
1
V
±10 nA
1
uA
10
15
A
400 mΩ
10
S
0.79
V
14
3.8
nC
3.8
3.7
7.7
nS
26
12
807
81
pF
38
VER 1.1 3
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