ACE1020M Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel 200-V MOSFET

ACE1020M
N-Channel 200-V MOSFET
Description
ACE1020M uses advanced trench technology to provide excellent R_DS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^b
T_C=25°C
Continuous Source Current (Diode Conduction) ^a
Power Dissipation
T_C=25°C
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
200
±20
10
40
10
50
-55 to 175
Unit
V
V
A
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient ^a
Maximum Junction-to-Case
Symbol Maximum Unit
R_θJA
R_θJC
40
°C/W
3
Notes
a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics.
b. Pulse width limited by maximum junction temperature.
VER 1.1 1