ACE4922B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – Dual N-Channel Enhancement Mode Field Effect Transistor

ACE4922BEM
Dual N-Channel Enhancement Mode Field Effect Transistor
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
V_DSS
60
V
Gate-Source Voltage
V_GSS
±20
V
Drain Current
Continuous ^ID
115
mA
Pulsed ^IDP^{*1 800}
Reverse Drain Current
Continuous ^IDR
115
mA
Pulsed ^IDR^{*1 800}
Total Power Dissipation
P_d*2 225 mW
Channel Temperature
Tch
150
O_C
Storage Temperature Range
Tstg -55 to150 ^OC
Note:
1.
Pw≦10µs, Duty cycle≦1 %。
2. When mounted on a 1*0.75*0.062 inch glass epoxy board。
Electrical CharacteristicsT_A=25 ^OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS(Note 2)
Drain-Source Breakdown Voltage V_(BR)DSS
VGS=0V, ID=10µA
60
Zero Gate Voltage Drain Current IDSS
VDS=60V, VGS=0V
Gate-source Leakage
I_GSS
VGS=±20V, VDS=0V
ON CHARACTERISTICS(Note 2)
V
1.0 uA
±10 nA
Gate Threshold Voltage
V_GS(th)
VDS=VGS , ID= 250uA
1.0 1.85 2.5
V
Static Drain-Source
On-Resistance
R_DS(ON)
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
7.5
Ω
7.5
Forward transfer admittance
g_FS
VDS=10V, ID=0.2A
80
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss VDS=25V VGS=0V f=1.0MHz
C_rss
SWITCHING CHARACTERISTICS
25 50
10 25
pF
3.0 5.0
Turn-On Delay Time
T_d(on)
Turn-Off Delay Time
T_d(off)
Note: Pw ≦ 300 µs, Duty cycle ≦ 1%
ID=0.2A,VDD=30V,
VGS=10V,RL=150Ω,RG=10Ω
12 20
ns
20 30
VER 1.1 2