ACE4922B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – Dual N-Channel Enhancement Mode Field Effect Transistor

ACE4922BEM
Dual N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer
power management and other battery powered circuits where high-side switching, low in-line power
loss, and resistance to transients are needed.
APPLICATIONS
 Low On-Resistance
 Fast Switching Speed
 Low-voltage drive
 Easily designed drive circuits
 Pb-Free Package is available. The suffix G means Pb-free package
 ESD Protected：2000V
Packaging Type
SOT-363
6
54
D₁
G₂
S₂
S₁
G₁
D₂
1
23
Ordering information
ACE4922BEM+ H
Halogen - free
Pb - free
EM : SOT-363
VER 1.1 1