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| ACE2420B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Power MOSFET | |||
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ACE2420B
N-Channel Enhancement Mode Power MOSFET
Electrical Characteristics
TA=25â, unless otherwise noted.
Parameter
Symbol
Drain-Source Breakdown
Voltage
V(BR)DSS
Zero Gate Voltage Drain Current IDSS1
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
VGS(TH)
IGSS
RDS(on)
Forward Trans Conductance
gFS
Diode Forward Voltage
VSD
Diode Forward Current
IS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td( on )
tr
td( off )
tf
Ciss
Coss
Crss
Test Conditions
Static
VGS = 0V, ID = 250μA
VDS = 200V, VGS = 0V
VGS = VDS , IDS= 250μA
VGS= ±20V , VDS=0V
VGS = 10V , ID= 15A
VDS= 10V , ID= 15A
ISD= 15A , VGS= 0V
Switching
VDS= 100V, ID= 15A,
VGS= 10V
VDD=100V,ID= 15A,
VGS= 10V,RG= 2.5Ω
Dynamic
VDS=25V,VGS= 0V,
f= 1.0MHz
Min Typ Max Unit
200
V
1 μA
1 1.5 2.5 V
±100 nA
62 80 mâ¦
30
S
1.2 V
24 A
60
nC
19
nC
17
nC
10
ns
18
ns
22
ns
5
ns
4200
pF
163
pF
75
pF
VER 1.1 2
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