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| ACE2420B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Power MOSFET | |||
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ACE2420B
N-Channel Enhancement Mode Power MOSFET
Description
ACE2420B uses advanced trench technology and design to provide excellent RDS(ON) with low gate
charge. It can be used in a wide variety of applications.
Features
ï¬ VDS=200V , ID= 24A
ï¬ RDS(ON) @VGS =10V , TYP 62mΩ
Absolute Maximum Ratings
(TA=25â Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous)*AC
TA=25â
TA=100â
ID
24
A
17
Drain Current (Pulsed)*B
IDM
100
A
Power Dissipation
TA=25â
PD
150
A
Operating Temperature/Storage Temperature
TJ/ TSTG -55~150 OC /W
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still
air environment with TA=25°C. The value in any given application depends on the user's specific board
design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t⤠10s junction to ambient thermal resistance rating.
Packaging Type
T0-220
Ordering information
ACE2420BXX + H
Halogen - free
Pb - free
ZM: TO-220
VER 1.1 1
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