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| ACE2341_12 Datasheet, PDF (2/7 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET | |||
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Packaging Type
SOT-23-3
3
1
2
ACE2341
P-Channel Enhancement Mode MOSFET
SOT-23-3
1
2
3
Description
Gate
Source
Drain
Ordering information
ACE2341 XX + H
Halogen - free
Pb - free
BM: SOT-23-3
Electrical Characteristics
(TA=25â, Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
-20
-0.35
V
-0.9
Gate Leakage Current
IGSS
VDS=0.V, VGS=±12V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V TJ=55â
-1
uA
-10
On-State Drain Current
ID(ON)
VDSâ¦-5V, VGS=-4.5V
-6
A
VGS=-4.5V, ID=-3.3A
0.036 0.045
Drain-Source On-Resistance RDS(ON)
VGS=-2.5V, ID=-2.8A
0.045 0.055 Ω
VGS=-1.8V, ID=-2.3A
0.055 0.065
Forward Transconductance
Gfs
VDS=-5.0V, ID=-3.3A
3
S
Diode Forward Voltage
VSD
IS=-1.6A, VGS=0V
-0.8 -1.2 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=-6V, VGS=-4.5V,
IDâ¡-3.3A
Qgd
8
13
1.2
nC
2.2
VER 1.3 2
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