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| ACE2341_12 Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET | |||
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ACE2341
P-Channel Enhancement Mode MOSFET
Description
The ACE2341 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
ï· -20V/-3.3A, RDS(ON)=45mΩ@VGS=-4.5V
ï· -20V/-2.8A, RDS(ON)= 55mΩ@VGS=-2.5V
ï· -20V/-2.3A, RDS(ON)= 65mΩ@VGS=-1.8V
ï· Super high density cell design for extremely low RDS(ON)
ï· Exceptional on-resistance and maximum DC current capability
Application
ï· Power Management in Note book
ï· Portable Equipment
ï· Battery Powered System
ï· DC/DC Converter
ï· Load Switch
ï· DSC
ï· LCD Display inverter
Absolute Maximum Ratings
(TA=25â Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS -20 V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current (TJ=150â)
TA=25â
TA=70â
ID
-4.0
A
-2.8
Pulsed Drain Current
IDM
-12 A
Continuous Source Current (Diode Conduction) IS
-1.0 A
Power Dissipation
TA=25â
TA=70â
PD
1.25
W
0.8
Operating Junction Temperature
TJ -55/150 â
Storage Temperature Range
TSTG -55/150 â
Thermal Resistance-Junction to Ambient
RθJA 140 â/W
VER 1.3 1
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