ACE2308E Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – N-Channel 30-V MOSFET

ACE2308E
N-Channel 30-V MOSFET
Ordering information
ACE2308EBM + H
Halogen - free
Pb - free
BM : SOT-23-3
Electrical Characteristics
(T_A=25℃, unless otherwise specified)
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
Static
Min. Typ. Max. Unit
VGS(th)
VDS = VGS, ID = 250 uA
0.4
V
VGS(th)
VDS = 0 V, VGS = ±12 V
±10 uA
IDSS
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 55°C
1
uA
25
ID(on)
VDS = 5 V, VGS = 4.5 V
5
A
rDS(on)
VGS = 4.5 V, ID = 3 A
VGS = 2.5 V, ID = 2.4 A
60
mΩ
82
gfs
VDS = 15 V, ID = 2.8 A
12
S
VSD
IS = 1 A, VGS = 0 V
0.69
V
Dynamic b
Qg
6
Qgs
V_DS = 15 V, V_GS = 4.5 V, I_D = 3 A
Qgd
1.0
nC
2.0
t_d(on)
8
tr
V_DS = 15 V, R_L = 3.6 Ω, I_D = 3 A, V_GEN =
21
nS
t_d(off)*
4.5 V, R_GEN = 6 Ω
48
t_f
26
C_iss
417
C_oss
VDS = 15 V, VGS = 0 V, f = 1 MHz
77
pF
C_rss
68
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
VER 1.1 2