ACE2308E Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel 30-V MOSFET

ACE2308E
N-Channel 30-V MOSFET
Features
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications
• Power Routing
• Li Ion Battery Packs
• Level Shifting and Driver Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a
T_A=25℃
T_A=70℃
Pulse Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a
T_A=25℃
T_A=70℃
Operating Temperature / Storage Temperature
*1 Pw ≦10 μs, Duty cycle ≦1 %
*2 When mounted on a 1*0.75*0.062 inch glass epoxy board%
Symbol Limit
V_DS
30
V_GS
±12
3.5
I_D
2.8
I_DM
15
I_S
1.9
1.3
P_D
0.8
T_J/T_STG -55/150
Units
V
V
A
A
A
W
O_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Maximum Junction-to-Ambient ^a
t <= 10 sec
Steady State ^RθJA
100
166
Units
O_C/W
Packaging Type
SOT-23-3
D
G
S
VER 1.1 1