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| ACE2305B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor | |||
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ACE2305B
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
On/Off characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA
Zero Gate Voltage Drain Current
IDSS
VDS=-16V, VGS=0V
Gate Leakage Current
Gate Threshold Voltage
IGSS
IGS(th)
VGS=+8V, VDS=0V
VGS=VDS, IDS=-250µA
VGS=-4.5V, ID=-4A
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V, ID=-4A
VGS=-1.8V, ID=-2A
Gate Threshold Voltage
VGS(th) VDS=VGS, ID=-250uA
Forward Transconductance
gFS
Maximum Body-Diode Continuous
Current
IS
VDS=-5V, ID=-4A
Drain Forward Voltage
VSD
IS=-1A,VGS=0V
Switching characteristics(3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=-10V, ID=-4A
VGS=-4.5V
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Td(on)
tf
td(off)
tf
VDD=-10V,RL=2.5Ω
ID=-4A, VGEN=-4.5V
RG=3Ω
Dynamic characteristics(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
VDS=-10V, VGS=0V
f=1.0MHz
Crss
Note: 1. Pulse width limited by maximum junction temperature
2. Pulse test: PWâ¦300us, duty cycleâ¦2%
3. For design AID only, not subject to production testing.
4. Switching time is essentially independent of operating temperature.
Min.
-20
-0.3
-1
8
Typ. Max. Unit
V
-1 uA
±10 nA
-0.65 -1 nA
50
55
59
63 mΩ
74
83
-1.6 -2.0 V
16
S
-2.2 A
-0.8
-1
V
4.59 5.97
2.14 2.78 nC
2.51 3.26
965.2 1930.4
1604 3208
ns
7716 15432
3452 6904
36.45
128.57
pF
15.17
VER 1.2 2
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