ACE2305B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor

ACE2305B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE2305B uses advanced trench technology to provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications.
Features
 VDS=-20V, I_D=-4A
 RDS(ON)<55mΩ @ V_GS=-4.5V
 RDS(ON)<63mΩ @ V_GS=-2.5V
 RDS(ON)<83mΩ @ V_GS=-1.8V
 ESD Protected: 3000V HBM
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
V_DS
-20 V
Gate-Source Voltage
V_GS
±8
V
T_A=25 ^OC
-4
Drain Current (Continuous)
T_A=70 ^OC
I_D
A
-3.2
Drain Current (Pulse)
I_DM
-30 A
Power Dissipation
T_A=25 ^OC
P_D
1.4 W
Operating and Storage Temperature Range T_J,T_STG -55 to 150 ^OC
Packaging Type
SOT-23-3L
3
1
2
SOT-23-3L Description
1
Gate
2
Source
3
Drain
Ordering information
D
G
S
ACE2305B XX + H
Halogen - free
Pb - free
BM : SOT-23-3L
VER 1.2 1