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| ACE2304B Datasheet, PDF (2/5 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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Ordering information
ACE2304B XX + H
Halogen - free
Pb - free
BM : SOT-23-3L
ACE2304B
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Drain-source breakdown
voltage
Zero gate voltage drain
current
Gate threshold voltage
Gate leakage current
Drain-source on-state
resistance
Forward transconductance
Diode forward voltage
Maximum body-diode
continuous current
V(BR)DSS
IDSS
VGS(th)
IGSS
RDS(ON)
gFS
VSD
IS
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Turn-on rise time
Tr
Turn-off delay time
td(off)
Turn-off fall time
Tf
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Ciss
Coss
Crss
Rg
Test Conditions
Static
VGS=0V, ID=250µA
VDS=24V, VGS=0V
VGS=VDS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, ID=5.8A
VGS=4.5V, ID=5A
VDS=5V, ID=5A
ISD=1A, VGS=0V
Switching
VGS=10V, VDS=15V, ID=5A
VGS=10V, VDD=15V, ID=1A
RL=15Ω, RG=6Ω
Dynamic
VGS=0V, VDS=15V,
f=1.0MHz
VGS=0V, VDS=0V, f=1MHz
Min Typ Max Unit
30 34
V
1 µA
1 1.4 2 V
100 nA
26 31.5 mΩ
37 44 mΩ
15
S
0.77 1.0 V
3A
7.6 9.9 nC
1.3 1.7 nC
1.7 2.2 nC
10.1 20.3 ns
3.2 6.3 ns
22.2 44.4 ns
3 6 ns
391
pF
86.2
pF
59.4
pF
1.4 2 Ω
VER 1.2 2
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