 English |
|
|
|
|
|
|
|
| ACE2304B Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
| |||
|
ACE2304B
N-Channel Enhancement Mode MOSFET
Description
The ACE2304BBM+ uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Features
ï· 30V/5A
ï· RDS(ON)=26mΩ (typ.) @ VGS=10V
ï· RDS(ON)=37mΩ (typ.) @ VGS=4.5V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
30 V
Gate-Source Voltage
VGSS ±20 V
Drain Current (Continuous)
TA=25â
TA=70â
ID
5
A
4.1
Drain Current (Pulsed)
IDM
20 A
Power Dissipation
TA=25â
TA=70â
PD
1.4
W
1
Operating temperature / storage temperature TJ/TSTG -55~150 â
Packaging Type
SOT-23-3L
3
1
2
SOT-23-3L Description Function
1
G
Gate
2
S
Source
3
D
Drain
VER 1.2 1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese