 English |
|
|
|
|
|
|
|
| ACE2303B Datasheet, PDF (2/5 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor | |||
| |||
| ◁ |
ACE2303B
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Off characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -30
Zero Gate Voltage Drain Current
IDSS
VDS=-30V, VGS=0V
Gate-Body Leakage, Forward
IGSSF
VGS=+20V, VDS=0V
Gate-Body Leakage, Reverse
IGSSR
VGS=-20V, VDS=0V
On characteristics(2)
Static Drain-Source On-Resistance RDS(ON)
VGS=-4.5V, ID=-3A
VGS=-10V, ID=-4.1A
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
-1
Forward Transconductance
gFS
VDS=-5V, ID=-2.8A
4
Switching characteristics(3)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Td(on)
tf
td(off)
tf
VDD=-6V,RL=6Ω
ID=-1A, VGEN=-4.5V
RG=6Ω
Dynamic characteristics(3)
Input Capacitance
Output Capacitance
Feedback Capacitance
Ciss
Coss
Crss
VDS=-6V, VGS=0V
f=1.0MHz
Drain-source diode characteristics and maximum ratings
Drain-Source Diode Forward
Current(4)
IS
Drain-Source Diode Forward
Voltage(2)
VSD
IS=-1A,VGS=0V
-0.6
Note: 1. Pulse width limited by maximum junction temperature
2. Pulse test: PWâ¦300us, duty cycleâ¦2%
3. Guaranteed by design, not subject to production testing.
4. Surface Mounted on FR4 Board, t < 5 sec.
Typ.
69
48
-1.6
6
680
72
58
-0.8
Max. Unit
V
-1 uA
100 nA
-100 nA
87
mΩ
58
-2.0 V
S
20
10
ns
65
45
pF
-1.35 A
-1 V
VER 1.2 2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese