ACE2303B Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor

ACE2303B
P-Channel Enhancement Mode Field Effect Transistor
Description
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resistance. This device is particularly suited for
low voltage application such as portable equipment, power management and other battery powered
circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
 VDS=-30V
 I_D=-3.6A
 RDS(ON) 58mΩ @ V_GS=-10V
 RDS(ON) 87mΩ @ V_GS=-4.5V
 High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
V_DSS
-30 V
V_GSS
±20
V
Drain Current
Continuous
Pulsed⁽¹⁾
I_D
-3.6
A
-10
Power Dissipation
25 ^OC
P_D
1.4 W
Operating and Storage Temperature Range T_J,T_STG -55 to 150 ^OC
Packaging Type
SOT-23-3L
3
1
2
Ordering information
SOT-23-3L Description
1
Gate
2
Source
3
Drain
ACE2303B XX + H
Halogen - free
Pb - free
BM : SOT-23-3L
VER 1.2 1