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| ACE2302_12 Datasheet, PDF (2/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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Packaging Type
SOT-23-3
3
1
2
SOT-23-3 Description
1
Gate
2
Source
3
Drain
ACE2302
N-Channel Enhancement Mode MOSFET
Ordering information
ACE2302 XX + H
Halogen - free
Pb - free
BM : SOT-23-3
Electrical Characteristics
TA=25â, unless otherwise noted
Parameter
Symbol
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS(th)
IGSS
IDSS
On-State Drain Current
Drain-Source
On-Resistance
Forward
ID(ON)
RDS(ON)
gfs
Conditions
Static
VGS=0V, ID=250 uA
VD=VGS, ID=250uA
VDS=0V,VGS=±12V
VDS=20V, VGS=0V
VDS=20V, VGS=0V TJ=55â
VDSâ§5V, VGS=4.5V
VDSâ§5V, VGS=2.5V
VGS=4.5V, ID=3.6A
VGS=2.5V, ID=3.1A
VDS=5V,ID=3.6A
Min. Typ. Max. Unit
20
V
0.45
1.2
±100 nA
1
uA
10
6
A
4
0.050 0.080
Ω
0.070 0.095
10
S
VER 1.3 2
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