ACE2302_12 Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET

ACE2302
N-Channel Enhancement Mode MOSFET
Description
The ACE2302 is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
 20V/3.6A, RDS(ON)=80mΩ@V_GS=4.5V
 20V/3.1A, RDS(ON)=95mΩ@V_GS=2.5V
 Super high density cell design for extremely low R_DS(ON)
 Exceptional on-resistance and maximum DC current capability
Application
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
V_DSS
20
V
Gate-Source Voltage
V_GSS ±12 V
Continuous Drain Current (T_J=150℃)
T_A=25℃
T_A=70℃
I_D
3.2
A
2.6
Pulsed Drain Current
I_DM
10 A
Continuous Source Current (Diode Conduction)
Power Dissipation
T_A=25℃
T_A=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
I_S
P_D
T_J
T_STG
R_θJA
1.6 A
1.25
W
0.8
150 ^OC
-55/150 ^OC
100 ^OC/W
VER 1.3 1