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| ACE2302C Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE2302C
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol Test Conditions Min Typ Max Unit
Static
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state resistance
Forward transconductance
Diode forward voltage
Maximum body-diode continuous
current
V(BR)DSS
IDSS
VGS(th)
IGSS
RDS(ON)
gFS
VSD
VGS=0V, ID=250µA
VDS=20V, VGS=0V
VGS=VDS, IDS=250µA
VGS=±12V, VDS=0V
VGS=4.5V, ID=3A
VGS=2.5V, ID=2A
VGS=1.8V, ID=2A
VDS=10V, ID=6A
ISD=1.7A, VGS=0V
IS
Switching
20 24
V
1 µA
0.6 0.84 1 V
100 nA
23 28
31 38 mΩ
55 60
5
S
0.9
V
1.7 A
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs
Qgd
VGS=4.5V, VDS=10V,
ID=6A
6.3 8.1
1.7 2.2 nC
1.4 1.8
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
Tr
td(off)
Tf
VGS=10V, ID=1A
RG=6Ω, VGS=4.5V
10.4 20.8
4.4 8.8
ns
27.4 54.8
4.2 8.4
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V, VDS=8V,
f=1.0MHz
522.3
98.5
pF
74.7
Note :
1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t⤠10s junction to ambient thermal resistance rating.
VER 1.2 2
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