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| ACE2302C Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE2302C
N-Channel Enhancement Mode MOSFET
Description
The ACE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as load switch or in PWM
applications.
Features
ï· 20V/5.1A
ï· RDS(ON)=28mΩ (typ.) @ VGS=4.5V
ï· RDS(ON)=38mΩ (typ.) @ VGS=2.5V
ï· RDS(ON)=60mΩ (typ.) @ VGS=1.8V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
20 V
Gate-Source Voltage
VGSS ±12 V
Drain Current (Continuous)
TA=25â
TA=70â
ID
5.1
A
4
Drain Current (Pulsed)
IDM
20 A
Power Dissipation
TA=25â PD
1W
Operating temperature / storage temperature TJ/TSTG -55~150 â
Packaging Type
SOT-23-3
3
1
2
SOT-23-3 Description Function
1
G
Gate
2
S
Source
3
D
Drain
Ordering information
ACE2302C XX + H
Halogen - free
Pb - free
BM : SOT-23-3
VER 1.2 1
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