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| ACE2302B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE2302B
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol Test Conditions Min Typ Max Unit
Static
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=250µA 20 24
V
Zero gate voltage drain current
IDSS
VDS=20V, VGS=0V
1 µA
Gate threshold voltage
VGS(th) VGS=VDS, IDS=250µA 0.6 0.74 1
V
Gate leakage current
IGSS
VGS=±12V, VDS=0V
100 nA
VGS=10V, ID=6A
19.5 26
Drain-source on-state resistance RDS(ON)
VGS=4.5V, ID=5A
22.6 28 mΩ
VGS=2.5V, ID=4A
31 42
Forward transconductance
gFS
VDS=10V, ID=6A
5
S
Diode forward voltage
VSD
Maximum body-diode continuous
current
IS
ISD=1.7A, VGS=0V
0.78 1 V
1.7 A
Switching
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs
Qgd
VGS=4.5V, VDS=10V,
ID=6A
6.3 8.1
1.7 2.2 nC
1.4 1.8
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
Tr
td(off)
Tf
VGS=10V, ID=1A
RG=6Ω, VGS=4.5V
10.4 20.8
4.4 8.8
ns
27.4 54.8
4.2 8.4
Input capacitance
Output capacitance
Reverse transfer capacitance
Dynamic
Ciss
Coss
Crss
VGS=0V, VDS=8V,
f=1.0MHz
522.3
98.5
pF
74.7
Note :
1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t⤠10s junction to ambient thermal resistance rating.
VER 1.2 2
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