ACE2302B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET

ACE2302B
N-Channel Enhancement Mode MOSFET
Description
The ACE2302B uses advanced trench technology to provide excellent R_DS(ON) , low gate charge and
operation with gate voltages as low as 2.5V while retaining a 12V V_GS(MAX) rating. This device is suitable
for use as a uni-directional or bi-directional load switch.
Features
 V_DS=20V
 I_D=6A (V_GS=10V)
 RDS(ON)=26mΩ (typ.) @ V_GS=10V
 RDS(ON)=28mΩ (typ.) @ V_GS=4.5V
 RDS(ON)=42mΩ (typ.) @ V_GS=2.5V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
V_DSS
20 V
Gate-Source Voltage
V_GSS ±12 V
Drain Current (Continuous)
T_A=25℃
T_A=70℃
I_D
6
A
4.8
Drain Current (Pulsed)
I_DM
20 A
Power Dissipation
T_A=25℃ P_D
1.4 W
Operating temperature / storage temperature T_J/T_STG -55~150 ℃
Packaging Type
SOT-23-3L
3
1
2
SOT-23-3L Description Function
1
G
Gate
2
S
Source
3
D
Drain
Ordering information
ACE2302B XX + H
Halogen - free
Pb - free
BM : SOT-23-3L
VER 1.2 1