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| ACE2301B Datasheet, PDF (2/5 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET | |||
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ACE2301B
P-Channel Enhancement Mode MOSFET
Ordering information
ACE2301B XX + H
Halogen - free
Pb - free
BM : SOT-23-3
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Off characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -20
Drain Cut-off Current
Gate-Source Leakage Current
IDSS
VDS=-20V, VGS=0V
IGSS
VGS=±8V, VDS=0V
On characteristics
Drain-Source On-state Resistance
RDS(ON)
RDS(ON)
VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2A
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA -0.45
Forward Transconductance
gFS
VDS=-5V, ID=-2.8A
Switching characteristics(3)
Turn-On Delay Time
Turn-Off Delay Time
Td(on)
td(off)
VDD=-6V,RL=6R
ID=-1A, VGEN=-4.5V
RG=6R
Dynamic characteristics(3)
Input Capacitance
Output Capacitance
Feedback Capacitance
Ciss
Coss
Crss
VDS=-6V, VGS=0V
f=1.0MHz
Drain-source diode characteristics and maximum ratings
Diode Forward Voltage
VSD
IS=-1.6A,VGS=0V
-0.5
Note: 1. Pulse width limited by maximum junction temperature
2. Pulse test: PWâ¦300us, duty cycleâ¦2%
3. For design AID only, not subject to production testing
4. Switching time is essentially independent of operating temperature
Typ.
100
120
-0.75
6.5
13
42
415
223
87
Max.
-1
±100
130
200
-1.5
25
70
-1.2
Unit
V
uA
nA
mR
V
S
ns
pF
V
VER 1.3 2
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