ACE2301B Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET

ACE2301B
P-Channel Enhancement Mode MOSFET
Description
ACE2301B is produced with high cell density DMOS trench technology, which is especially used to
minimize on-state resistance. This device particularly suits low voltage applications such as portable
equipment, power management and other battery powered circuits, and low in-line power dissipation are
needed in a very small outline surface mount package with excellent thermal and electrical capabilities.
Features
 VDS=-20V, V_GS 8V, I_D=-2.3A
 RDS(ON) @V_GS=-4.5V/I_D -2.8A, 100mR(Typ.)
 RDS(ON) @V_GS=-2.5V/I_D -2A, 120mR(Typ.)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
V_DSS
V_GSS
-20 V
±8
V
Drain Current
Continuous
Pulsed⁽¹⁾
I_D
-2.3
A
-10
Power Dissipation
25 ^OC
70 ^OC
750
P_D
mW
480
Operating and Storage Temperature Range T_J,T_STG -55 to 150 ^OC
Packaging Type
SOT-23-3
3
1
2
SOT-23-3 Description
1
Gate
2
Source
3
Drain
VER 1.3 1