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| ACE1820B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Power MOSFET | |||
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ACE1820B
N-Channel Enhancement Mode Power MOSFET
Ordering information
ACE1820B XX + H
Halogen - free
Pb - free
ZM: TO-220
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Test Conditions
Min
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS = 0V, ID = 250μA
200
Zero Gate Voltage Drain Current IDSS1
VDS = 160V, VGS = 0V
Gate Threshold Voltage
VGS(TH)
VGS = VDS , IDS= 250μA
1.2
Gate Leakage Current
IGSS
VGS= ±20V , VDS=0V
Drain-Source On-state
Resistance
Forward Trans Conductance
Diode Forward Voltage
RDS(on)
gFS
VSD
VGS = 10V , ID= 9A
VGS = 4.5V , ID= 9A
VDS= 25V , ID= 57A
ISD= 40A , VGS= 0V
Diode Forward Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
IS
Qg
Qgs
Qgd
td( on )
tr
td( off )
tf
Ciss
Coss
Crss
Rg
Switching
VDS= 80V, ID= 9A,
VGS= 10V
VDD=50V,ID= 9A,
VGS= 10V,RGEN= 3.3Ω
Dynamic
VDS=25V,VGS= 0V,
f= 1.0MHz
VGS=0V, VDS=0V, F=1MHz
Typ Max Unit
V
1 μA
1.6 2.5 V
±100 nA
170
mâ¦
180
22
S
1.2 V
18 A
45
nC
9
nC
10.5
nC
13
ns
8.2
ns
25
ns
11
ns
2.47
pF
109
pF
70
pF
2
Ω
VER 1.1 2
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