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| ACE1820B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Power MOSFET | |||
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ACE1820B
N-Channel Enhancement Mode Power MOSFET
Description
ACE1820B uses advanced trench technology and design to provide excellent RDS(ON) gate charge. It
can be used in a wide variety of applications
Features
ï¬ VDS=200V, ID=18A
ï¬ RDS(ON)1@VGS=10V, MAX 170mΩ
ï¬ RDS(ON)1@VGS=4.5V, MAX 180mΩ
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)*AC
TA=25â
TA=100â
VDSS
VGSS
ID
200
V
±20
V
18
A
11.7
Single Pulse Avalanche Energy3
EAS
15
mJ
Drain Current (Pulsed)*B
IDM
40
A
Power Dissipation
TA=25â
PD
83
W
Operating temperature / storage temperature
TJ/TSTG
-55~150 â
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t⤠10s junction to ambient thermal resistance rating.
Packaging Type
TO-220
VER 1.1 1
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