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| ACE17446B Datasheet, PDF (2/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor | |||
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ACE17446B
N-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE17446B XX + H
Halogen - free
Pb - free
PD: PDFN3*3-8L
NN: DFN3*3-8L
Electrical Characteristics TA=25â, unless otherwise specified.
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
V(BR)DSS
IDSS
VGS(th)
IGSS
Drain-source on-state resistance RDS(ON)
Forward Trans conductance
gFS
Diode forward voltage
VSD
Maximum body-diode
continuous current
IS
VGS=0V, ID=250µA
VDS=30V, VGS=0V
VGS=VDS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, ID=20A
VGS=4.5V, ID=20A
VDS = 5V, ID= 20A
ISD=20A, VGS=0V
30
V
1 µA
0.7 1.1 1.6 V
100 µA
5. 6.5
mΩ
6.5 10
50
S
0.78 1.3 V
45 A
Switching
Total Gate Charge
Qg
25.2
Gate-Source Charge
Qgs
VGS=10V, VDS=15V, ID=20A
13
nC
Gate-Drain Charge
Qgd
3.6
Turn-on Delay Time
td (on )
6.5
Turn-on Rise Time
Turn-off Delay Time
tr
td(off)
VGS=10V, VDS=15V,
RL=0.75â¦,RGEN=3â¦
2.5
ns
17.5
Turn-off Fall Time
tf
3.8
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS=0V, VDS=15V,
f=1MHz
1230
420
pF
150
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t⤠10s junction to ambient thermal resistance rating.
VER 1.2 2
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