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| ACE17446B Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor | |||
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ACE17446B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE17446B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a kelvin connection to the source, which may be used to bypass the source inductance.
ACE17446BPD and ACE17446BNN are electrically identical.
-RoHS Compliant
-Halogen Free
Features
ï¬ VDS (V) = 30V
ï¬ VGS (V) = ±20V
ï¬ ID = 45A (VGS = 10V)
ï¬ RDS(ON) < 6.5m⦠(VGS = 10V)
ï¬ RDS(ON) < 10m⦠(VGS = 4.5V)
Absolute Maximum Ratings@TA=25â unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)*AC
TA=25â
TA=70â
Drain Current (Pulsed)*B
Power Dissipation
TA=25â
TA=70â
Operating temperature / Storage temperature
Symbol
VDSS
VGSS
ID
IDM
PD
TJ/TSTG
Max
Unit
30
V
±20
V
45
A
36
140
A
25
W
9
-55~150 â
Packaging Type
PDFN3*3-8L
DFN3*3-8L
VER 1.2 1
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