ACE1715B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET

ACE1715B
N-Channel Enhancement Mode MOSFET
Electrical Characteristics TA=25 ^OC unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Note:
Symbol
V_(BR)DSS
I_DSS
I_GS(TH)
I_GSS
R_DS(ON)
g_FS
V_SD
Conditions
Static
V_GS=0V, I_D=250uA
V_DS=150V, V_GS=0V
V_GS= V_DS, I_D=250uA
V_GS=±20V, V_DS=0V
V_GS=10V, I_D=1.5A
V_DS=15V, I_D=1.5A
I_SD=2A, V_GS=0V
Min.
150
1.5
I_S
Q_g
Q_gs
Q_gd
t_d(on)
t_f
t_d(off)
t_f
C_iss
C_oss
C_rss
Switching
V_GS=10V,V_DS=75V, I_D=1.5A
V_GS=10V ,V_DS=75V,
R_L=75Ω,R_GEN=6Ω
Dynamic
V_GS=0V ,V_DS=75V,
F=1MHz
Typ.
2.0
400
5
8
1.4
2.1
8
10
20
15
235
36
20
Max. Unit
V
1
uA
2.5 V
±100 nA
450 mΩ
S
1.2 V
2
A
nC
ns
pF
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.1 2