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| ACE1715B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE1715B
N-Channel Enhancement Mode MOSFET
Description
The ACE1715B uses advanced trench technology and design to provide excellent RDS(ON) with low gate
charge. It can be used in a wide variety of applications.
Features
ï· VDS (V) = 150V
ï· ID = 1.5 (VGS = 10V)
ï· RDS(ON) < 450mΩ (VGS = 10V)
ï· High density cell design for ultra low RDS(ON)
ï· Fully characterized avalanche voltage and current
Absolute Maximum Ratings TA=25â unless otherwise noted
Parameter
Symbol Ratings Unit
Drain-Source Voltage
VDSS
150 V
Gate-Source Voltage
VGSS
±20
V
TA=25 OC
Drain Current (Continuous) * AC
TA=70 OC
ID
1.5
1.0 A
Drain Current (Pulse) * B
IDM
6
Power Dissipation
TA=25 OC
TA=70 OC
PD
2
W
1.3
Operating temperature / storage temperature TJ,TSTG -55 to 150 OC
Packaging Type
SOT-23-6L
D
D
D
D
G
S
Marking
1715
.
Ordering information
ACE1715B XX + H
Halogen - free
Pb - free
GM : SOT-23-6L
VER 1.1 1
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