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| ACE1710B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE1710B
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=250µA
100 110
V
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state resistance
Forward transconductance
IDSS
VGS(TH)
IGSS
RDS(ON)
gFS
VDS=100V, VGS=0V
VGS=VDS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, ID=1A
VDS=5V, ID=1A
1 µA
1.2 1.8 2.5 V
±100 nA
250 280 mΩ
1.2
S
Diode forward voltage
Maximum body-diode
continuous current
VSD ISD=1.3A, VGS=0V
IS
1.2 V
1.6 A
Switching
Total gate charge
Qg
5.2
nC
Gate-source charge
Qgs VGS=10V, VDS=50V,ID=1.3A
0.75
nC
Gate-drain charge
Qgd
1.4
nC
Turn-on delay time
td(on)
6
ns
Turn-on rise time
tr
VGS=10V, RL=39Ω,ID=1.3A,
10
ns
Turn-off delay time
td(off) VDS=50V, RG=1Ω
10
ns
Turn-off fall time
tf
6
ns
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V,VDS=50V
F=1.0MHz
190
pF
22
pF
13
pF
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board,tâ¤10sec.
3. Pulse Test: Pulse Widthâ¤300μs,Duty Cycleâ¤2%.
4. Guaranteed by design,not subject to production
VER 1.1 2
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